| 摘要 |
PROBLEM TO BE SOLVED: To reduce variations in a channel current flowing to a thin-film transistor. SOLUTION: A polycrystal silicon film 52A patterned slenderly in one direction, and a gate insulating film 53 are formed on a glass substrate 50. A gate material layer 70 made of a high-melt-point metal, such as chromium and molybdenum, is deposited on the entire surface of the glass substrate 50 by a CVD method. Then, the gate material layer 70 is photoetched to form a halfway gate layer 70A crossing the polycrystal silicon film 52A. Then, the unneeded part of the halfway gate layer 70A is photoetched and a final gate layer 40 is formed. More specifically, the part of the halfway gate layer 70A extended to the right side of the polycrystal silicon film 52A is removed by etching while crossing the polycrystal silicon film 52A. COPYRIGHT: (C)2007,JPO&INPIT
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