| 摘要 |
A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: [Formula 1] <?in-line-formulae description="In-line Formulae" end="lead"?>-CH<SUB>2</SUB>-O-A<img id="PRIVATE-USE-CHARACTER-00001" he="7.20mm" wi="8.47mm" file="US20070224520A1-20070927-Brketopenst.TIF" alt="private use character Brketopenst" img-content="character" img-format="tif" />O-CH<SUB>2</SUB>-]<SUB>n</SUB> (1) <?in-line-formulae description="In-line Formulae" end="tail"?> (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).
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