发明名称 |
Techniques for spin-flop switching with offset field |
摘要 |
Techniques for reducing switching fields in semiconductor devices are provided. In one aspect, a semiconductor device comprising at least a first magnetic layer and a second magnetic layer with a spacer layer therebetween is provided. The semiconductor device is configured such that a thickness of at least one of the first magnetic layer and the second magnetic layer maintains a desired activation energy of the semiconductor device in the presence of an applied offsetting magnetic field. A method of reducing a switching field of a semiconductor device having at least a first magnetic layer and a second magnetic layer with a spacer layer therebetween is also provided.
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申请公布号 |
US7274057(B2) |
申请公布日期 |
2007.09.25 |
申请号 |
US20040831839 |
申请日期 |
2004.04.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
WORLEDGE DANIEL C. |
分类号 |
H01L29/76;H01F10/32;H01L29/02;H01L43/08 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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