发明名称 Near-field photo-lithography using nano light emitting diodes
摘要 An embodiment of the present invention is a technique to pattern features. An array of nanowires is placed at a distance to a resist layer. The array forms a plurality of light emitting diodes (LEDs). The distance corresponds to a near-field region of the light emitted by the LEDs with respect to the resist layer. A control circuit controls the LEDs to emit the light to pattern a feature in the resist layer.
申请公布号 US7274998(B2) 申请公布日期 2007.09.25
申请号 US20050241182 申请日期 2005.09.30
申请人 INTEL CORPORATION 发明人 KURTIN JUANITA
分类号 G01R15/00;G02B9/00 主分类号 G01R15/00
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