HIGHLY SENSITIVE FIELD EFFECT TRANSISTOR TYPE BIO SENSOR AND METHOD OF MANUFACTURING THE SAME

摘要

A highly sensitive field effect transistor type bio sensor is provided to increase driving current and physical contacting area with a bio sensing target material, and enhance electric capacity of the device by structurally modifying the shape of a semiconductor substrate, and improve sensing reproducibility and accuracy of the bio sensor by increasing S/N ratio(signal to noise ratio) of the bio sensor. A highly sensitive field effect transistor type bio sensor comprises: a gate insulating membrane(203) deposited on a semiconductor substrate; a gate electrode(204) formed on the gate insulating membrane; a source region(201) and a drain region(202) formed in both sides of the gate insulating membrane; and a bio sensing membrane formed on the gate electrode, wherein a reference electrode is formed on the gate electrode and the semiconductor substrate has at least one predetermined prominence and depression part. The prominence and depression part is prepared by coating a polymer thin film with resist materials, performing an imprinting process on the resist with a micro stamp, repeating the imprinting process to form the pattern on the total substrate, removing a residual layer from the resist, and forming a predetermined shape on the semiconductor substrate with the resist pattern as a mask.