| 摘要 |
In conventional techniques, there has been a problem such that a pattern failure tends to occur in which electrode patterns formed by coating do not coincide with lyophilic patterns and the coating process is complicated to degrade the productivity. The present invention provides a thin film transistor substrate including: a substrate; a plurality of gate electrodes formed on a flat surface of the substrate so as to form an array constituted with ring-shaped flat patterns formed by continuously connecting the outer peripheries of a plurality of ellipses aligned along the major axis direction, or patterns each formed with the peripheral shape of an ellipse; a gate insulating film formed over the gate electrodes; and source electrodes and drain electrodes formed on the gate insulating film exclusive of the flat surface regions, on the gate insulating film, defined as the projected shapes of the gate electrodes.
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