摘要 |
<p>A fabrication method, a product structure, a fabrication method, and a sputtering target for the deposition of a conductive barrier or other liner layer in an interconnect structure. The barrier layer (82) comprises a conductive metal of a refractory noble metal alloy, such as a ruthenium/tantalum alloy, which may be amorphous though it is not require to be so. The barrier layer may be sputtered from a target (90) of similar composition. The barrier and target composition may be chosen from a combination of the refractory metals and the platinum-group metals as well as RuTa. A copper noble seed layer (112) may be formed of an alloy of copper and ruthenium in contact to a barrier layer (70) over the dielectric (66).</p> |
申请人 |
APPLIED MATERIALS, INC.;WANG, JENN, YUE;WANG, WEL, D.;WANG, RONGJIUM;TANAKA, YOICHIRO;CHUNG, HUA;ZHANG, HONG;YU, JICK;GOPALRAJA, PRABURAM;FU, JIANMING |
发明人 |
WANG, JENN, YUE;WANG, WEL, D.;WANG, RONGJIUM;TANAKA, YOICHIRO;CHUNG, HUA;ZHANG, HONG;YU, JICK;GOPALRAJA, PRABURAM;FU, JIANMING |