| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing the generation of a path gate leak even if a body contact structure is not employed, and to provide a manufacturing method thereof. <P>SOLUTION: In the semiconductor device having an SRAM consisting of a plurality of memory cells 50, path gate transistors Q5, Q6 constituting each memory cell 50 are each a bulk transistor (directly formed on a silicon substrate), and the other transistors Q1-Q4 are each an SOI transistor (formed on an Si layer of an SOI structure partially formed on the silicon substrate). In this configuration, a substrate potential of the path gate transistors Q5, Q6 can be fixed on a GND, for example, and charge accumulation on a portion below a channel region of the path gate transistors Q5, Q6 can be prevented. <P>COPYRIGHT: (C)2007,JPO&INPIT |
