| 摘要 |
A semi-conductor crystal, e.g. silicon, germanium, gallium arsenide or phosphide, is produced by placing a substrate semi-conductor crystal in wafer form and a growth source semi-conductor crystal in wafer form in a reaction tube 10-200 m apart and producing a temperature difference therebetween by heating the tube, passing a gas including halogen or hydrogen halide through the tube, thereby causing epitaxial growth on the growth source side of the substrate simultaneously with gaseous phase etching on the opposite side of the substrate. The halogen (e.g. Cl2, Br2 or I2) or hydrogen halide (e.g. HCl, HBr or Hl) is preferably mixed with a carrier gas, e.g. H2, N2 or HC. The crystals may be separated by a spacer of graphite, quartz, or the semi-conductor material and may have a temperature difference of 20-50 DEG C.
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