METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to prevent an amorphous carbon layer from being damaged by a coating defect of a capping layer in a step part of an align key formation region by using an SOG(spin on glass) layer with excellent step coverage as a capping layer interposed between an amorphous carbon layer and a photoresist layer when the amorphous carbon layer is used as a hard mask material. An amorphous carbon layer(240) for a hard mask and a capping layer are sequentially formed on an underlying layer on which a vertical step part exists. A photoresist layer pattern for defining a pattern formation region is formed on the capping layer. The photoresist layer pattern is removed by using O2 plasma when the align state of the photoresist layer pattern is grasped and a misalignment occurs. The capping layer is made of an SOG layer(250) with excellent step coverage to prevent an amorphous carbon layer for a hard mask from being lost by penetration of O2 plasma in a vertical step part when the photoresist layer pattern is removed. The SOG layer can have a thickness of 100~600 Å. The SOG layer can be hardened at a temperature of 350~1000 °C.