发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a technique capable of ensuring uniformity in the film thickness of a via-fill material applied and formed when applying the via-fill material onto a via opening in a via first dual damascene method and especially capable of forming the film of the via-fill material of which film thickness is nearly fixed regardless of the difference of via density. <P>SOLUTION: A paint film by the via fill material paint is provided on an insulating film in which a via is formed through a first coating stage for applying the via fill material paint 10a of which viscosity is adjusted lower than that of the via fill material paint used in a second coating stage to be described later so that a via 9 is fully filled with the via fill material paint, and a second coating stage for further coating a paint film formed in the first coating stage with a paint film formed in the first coating stage adjusted to viscosity higher than that of the via film material paint used in the first coating stage and the via fill material paint for composing a paint film having the same or similar composition for eliminating variations in the thickness of the paint film in cases other than the via position formed in the first coating stage. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007227818(A) 申请公布日期 2007.09.06
申请号 JP20060049499 申请日期 2006.02.27
申请人 CONSORTIUM FOR ADVANCED SEMICONDUCTOR MATERIALS &RELATED TECHNOLOGIES 发明人 FUNATSU YOSHIAKI
分类号 H01L21/768 主分类号 H01L21/768
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