| 摘要 |
PROBLEM TO BE SOLVED: To form a semiconductor device comprising three or more kinds of MISFET having the predetermined performances to which different voltages are applied by controlling increase in the manufacturing cost thereof. SOLUTION: In the case of forming three kinds of nMIS, for example; 1.2 V system nMIS, 1.8 V system nMIS, and 3.3 V system nMIS on the same semiconductor substrate 1 in the semiconductor device, structural conditions of a structural part such as thickness of a gate insulating film, gate length of a gate electrode 7, and depth of n-type diffusing region 11, are optimized to obtain the optimum performance in the standard 1.2 V system nMIS. In the 1.8 V system nMIS and 3.3 V system nMIS, the manufacturing steps are reduced by introducing the identical steps for manufacture of the gate insulating film and moreover introducing the identical steps for manufacture of the n-type diffusing region 9. On the other hand, the desired performance can be obtained in these nMIS by adjusting the gate length of the gate electrode 7. COPYRIGHT: (C)2007,JPO&INPIT
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