| 摘要 |
PROBLEM TO BE SOLVED: To provide a differential amplifying circuit for performing a fast and highly accurate data reading operation, and a nonvolatile storage device equipped with the same. SOLUTION: The sense amplifier SA adjusts the reference voltage Vrefb of a constant current source 80 to set nodes N1 and N2 to high potential levels, e.g., 0.6V or more. In other words, a sufficient current difference is secured between through currents IBL and Iref flowing through a memory cell MC by setting a high value of a voltage Vbias applied to the tunnel magneto-resistive element TMR of the memory cell MC. Branch current path parts 85a and 85b are disposed, and an amplifying operation is carried out by using voltage signals generated by current-voltage conversion of through currents between a through current In obtained by subtracting a through current IBL from a constant current Ip and a through current Inr obtained by subtracting a through current Iref from the constant current Ip as a pair of inputs. COPYRIGHT: (C)2007,JPO&INPIT
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