| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an antireflection film material having a beneficial antireflection effect on exposure to short-wavelength light, also having sufficiently high etching selectivity, that is, an etching rate which is sufficiently higher than that of a photoresist film as an upper layer and sufficiently lower than that of a substrate to be processed as an under layer under predetermined etching conditions, and capable of providing a nearly vertical form to the form of a resist pattern formed in the photoresist film as an upper layer. <P>SOLUTION: The antireflection film material for use in lithography contains at least a high molecular compound having a repeating unit of silsesquioxane having a substituted or unsubstituted carboxyl group. <P>COPYRIGHT: (C)2007,JPO&INPIT |
