| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a semiconductor integrated device having sufficient electrostatic withstand voltage. SOLUTION: The semiconductor device comprises a first MOS transistor M1 with a drain D1 connected with first electric potential Vo, a gate G1 connected with a driving circuit 12, and a source S1 connected with second electric potential GND; and an electrostatic protective circuit 13 composed of a bipolar transistor Q1 with a collector C1 connected with the first potential Vo and with a base B1 opened, and a second MOS transistor M2 with a drain D2 connected with an emitter E1 of the bipolar transistor Q1 and a gate G2 connected with a source S2 connected with the second electric potential GND. Breakdown voltage of the electrostatic protective circuit 13 is the sum of breakdown voltages of the bipolar transistor Q1 and the second MOS transistor M2. The breakdown voltage is smaller than that of the first MOS transistor M1 and larger than the maximum operation voltage. COPYRIGHT: (C)2007,JPO&INPIT
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