发明名称 Manufacturing method for a circuit pattern, a thin film transistor and an electronic appliance
摘要 A circuit pattern is formed by following steps: forming a light-blocking mask over a major surface of a light-transmitting substrate, forming a first film in a first region over the substrate and the mask, forming a photocatalytic film in at least a part of the first region over the first film, changing wettability of the first film in a second region which is in the first region, being in contact with the photocatalytic film, and not overlapping the mask, by light irradiation from a back surface opposite to the major surface of the substrate, removing the photocatalytic film, and forming a composition including a pattern forming material in the second region.
申请公布号 US2007207274(A1) 申请公布日期 2007.09.06
申请号 US20070712481 申请日期 2007.03.01
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 FUJII GEN
分类号 B05D5/12;B05D1/32;B05D3/00;B05D5/00;B28B19/00;B29B15/10;B29C71/02;B29C71/04;B41J3/407;C04B41/00;C08J7/18;C23C18/00;C23C20/00;C23C24/00;C23C26/00;C23C28/00;C23C30/00;G02F1/1335;H01C17/06;H05K3/00 主分类号 B05D5/12
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