| 摘要 |
A multiple plasma reactor is provided to process at least two wafers in a row at a high speed by generating inductive coupled plasma of high-density. A vacuum chamber(110) has upper chambers(120) protruding from an upper portion of the vacuum chamber. At least two tubular discharge bridges(133) connect the upper chambers. A transformer(130) has at least one discharge bridge mounted in a magnetic core and a primary winding(132) supplied with radio frequency. A power supply source(140) supplies the radio frequency to the primary winding. A continuous plasma discharge loop is formed by the upper chambers and the discharge bridges.
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