A SEMICONDUCTOR DEVICE HAVING A UNIFORM NICKEL ALLOY SILICIDE LAYER AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device having a nickel alloy silicide layer of a uniform thickness and its fabricating method are provided to improve the performance of the device by lowering leakage current and contact resistance. Device isolation regions(210) are formed in a substrate(200), and a gate electrode(230) is formed between the device isolation regions on the substrate. Source/drain regions(245) are formed between the substrate and the device isolation regions. Spacers(265) are formed on a side of the gate electrode, and a nickel alloy silicide layer is formed on the source/drain regions. The nickel alloy silicide is flush with a surface of the substrate.