| 摘要 |
PROBLEM TO BE SOLVED: To provide an SOI wafer wherein the deficiency of an SOI layer around the outer periphery of a wafer can be prevented easily and conveniently when manufacturing a semiconductor device. SOLUTION: An SOI wafer 10 is provided with a wafer 11 for a supporting board, a joint insulation film 12 on its surface, and an SOI layer 13. The outer periphery of the SOI wafer 10 is beveled, and a wafer end face 14, a bevel face 15 on the side of the SOI layer 13, and a bevel face 16 on the side of the wafer 11 for a supporting board are provided around the outer periphery thereof. A bevel angleθof the bevel face 15 to the surface of the SOI layer 13 is set to 30-60 degrees. Thus, the manufacture yield of the SOI wafer can be stabilized without reduction, and the deficiency of the SOI layer 13 around its outer periphery can be prevented easily and conveniently in the manufacturing step of a semiconductor device using the SOI wafer. COPYRIGHT: (C)2007,JPO&INPIT
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