| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To perform an erasing operation by a low voltage relating to a rewritable nonvolatile semiconductor storage device. <P>SOLUTION: The semiconductor storage device comprises: a selection gate 3 disposed in a first region on a substrate; a floating gate 6 disposed in a second region adjacent to the first region; a first diffusion region 7 provided in a third region adjacent to the second region; a control gate 11 disposed on the floating gate 6; and a driving circuit 22 for controlling a voltage applied to the substrate 1 (well 1a), the selection gate 3, the first diffusion region 7 and the control gate 11. In the erasing operation, the driving circuit 22 performs control so as to set the voltage of the selection gate 3 and the control gate 11 to be negative and set the voltage of the other one substrate 1 (well 1a) to be voltage. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
