发明名称 |
MULTI-PORT MEMORY DEVICE HAVING SERIAL INPUT/OUTPUT INTERFACE |
摘要 |
A multi-port memory device is provided to form a power layer in a package by embodying discretely a high speed serial input/output interface unit and a low speed DRAM(Dynamic Random Access Memory) unit and to secure the stability of data by separating data input/output portions from each other in the serial input/output interface unit. A multi-port memory device includes a first package ball out region and a second package ball out region. A plurality of first balls(110) are arranged within a first package ball out region(100) corresponding to a serial input/output interface unit. A plurality of second balls are arranged within the second package ball out region(200) corresponding to a DRAM unit. The first balls of the serial input/output interface unit are divided into serial data balls used for a serial data communication and serial power/ground balls for supplying a power voltage and a ground voltage to the serial data balls. |
申请公布号 |
KR100753127(B1) |
申请公布日期 |
2007.08.22 |
申请号 |
KR20060033049 |
申请日期 |
2006.04.12 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
IM, JAE HYUK;DO, CHANG HO |
分类号 |
H01L21/60;G11C7/10 |
主分类号 |
H01L21/60 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|