发明名称 MULTI-PORT MEMORY DEVICE HAVING SERIAL INPUT/OUTPUT INTERFACE
摘要 A multi-port memory device is provided to form a power layer in a package by embodying discretely a high speed serial input/output interface unit and a low speed DRAM(Dynamic Random Access Memory) unit and to secure the stability of data by separating data input/output portions from each other in the serial input/output interface unit. A multi-port memory device includes a first package ball out region and a second package ball out region. A plurality of first balls(110) are arranged within a first package ball out region(100) corresponding to a serial input/output interface unit. A plurality of second balls are arranged within the second package ball out region(200) corresponding to a DRAM unit. The first balls of the serial input/output interface unit are divided into serial data balls used for a serial data communication and serial power/ground balls for supplying a power voltage and a ground voltage to the serial data balls.
申请公布号 KR100753127(B1) 申请公布日期 2007.08.22
申请号 KR20060033049 申请日期 2006.04.12
申请人 HYNIX SEMICONDUCTOR INC. 发明人 IM, JAE HYUK;DO, CHANG HO
分类号 H01L21/60;G11C7/10 主分类号 H01L21/60
代理机构 代理人
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