| 摘要 |
A method of forming a capacitor in a semiconductor device is provided to form the spacing between storage node oxide layers by preventing bowing of an opened region of the storage node oxide layer. A storage node contact plug(36) is formed to penetrate interlayer dielectrics(32,33) formed on a semiconductor substrate(31), and has a storage node contact spacer(35) contacting a portion of the substrate. A buffer layer, an etch stop layer(38) and a storage node oxide layer(39) are formed on the interlayer dielectric. The storage node oxide layer and the etch stop layer are etched to form an opened region. Bowing prevention spacers(41a) are formed on both sidewalls of the opened region, and then the buffer layer under the etch stop layer is etched. The bowing prevention spacer is removed, and a storage node is formed.
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