| 摘要 |
There is provided a semiconductor device including a semiconductor chip which includes a semiconductor substrate and a multilayer interconnection structure formed thereon, the multilayer interconnection structure including an interlayer insulating film smaller in relative dielectric constant than an SiO<SUB>2 </SUB>film, an encapsulating resin layer which covers a major surface of the semiconductor chip on a side of the multilayer interconnection structure and covers a side surface of the semiconductor chip, and a stress relaxing resin layer which is interposed between the semiconductor chip and the encapsulating resin layer, covers at least a part of an edge of the semiconductor chip on the side of the multilayer interconnection structure, and is smaller in Young's modulus than the encapsulating resin layer.
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