发明名称 POROUS SILICON ELECTRO-ETCHING SYSTEM AND METHOD
摘要 <p>It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.</p>
申请公布号 EP2387458(B1) 申请公布日期 2014.03.05
申请号 EP20100732153 申请日期 2010.01.15
申请人 SOLEXEL, INC. 发明人 CRAFTS, DOUG;MOSLEHI, MEHRDAD;TAMILMANI, SUBRAMANIAN;KRAMER, JOE;KAMIAN, GEORGE;NAG, SOMNATH
分类号 H01L21/67;H01L31/18 主分类号 H01L21/67
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