发明名称 |
POROUS SILICON ELECTRO-ETCHING SYSTEM AND METHOD |
摘要 |
<p>It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.</p> |
申请公布号 |
EP2387458(B1) |
申请公布日期 |
2014.03.05 |
申请号 |
EP20100732153 |
申请日期 |
2010.01.15 |
申请人 |
SOLEXEL, INC. |
发明人 |
CRAFTS, DOUG;MOSLEHI, MEHRDAD;TAMILMANI, SUBRAMANIAN;KRAMER, JOE;KAMIAN, GEORGE;NAG, SOMNATH |
分类号 |
H01L21/67;H01L31/18 |
主分类号 |
H01L21/67 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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