| 摘要 |
A method for fabricating an aluminum nitride cover plate is provided to remarkably increase production yield of a semiconductor memory by fabricating an AlN cover plate with precision and uniform specifications. A circuit and a pattern are designed to fabricate a mask(50) according to the pattern. An AlN material not greater than 3 mm s is prepared to coat photoresist resin on the upper surface of the AlN material. A stepper exposure process is performed on the surface of the photoresist layer according to the pattern. The resultant material is soaked into an alkaline solution to form a pattern on the photoresist layer and the AlN material by a chemical etching process. The photoresist layer is removed by a sand blast process to finish the upper surface of an AlN cover plate. The back surface of the AlN material is welded by a ceramic welding process to complete the AlN cover plate. In the sand blast process, the residual photoresist layer can be removed by a sand blast process in which mesh micro powder of #600-#1000 is blasted to perform a precise grinding process.
|
