发明名称 MONOLITHIC RF CIRCUIT AND METHOD OF FABRICATING THE SAME
摘要 A monolithic RF circuit and its manufacturing method are provided to improve a manufacturing yield of the monolithic RF circuit by forming a switch along with a filter. A monolithic RF circuit includes a base substrate(110), a filter unit(130), and a switching unit(140). The filter unit includes first and second support layers(131a,131b), a first air gap(AG), a first electrode, a first piezoelectric layer(133), and a second electrode(134). The filter unit passes a signal within a predetermined frequency band. The switching unit includes a third support layer(141), a second air gap(AG2), a first switch electrode(142), and a second piezoelectric layer(143). The switching unit is switched by an RF signal, which is received from outside. The first air gap is formed between the first and the second support layers. The first electrode is formed on the second support layer and the first air gap. The first piezoelectric layer is formed on the first support layer and the first electrode. The second electrode is formed on the first piezoelectric layer.
申请公布号 KR20070081321(A) 申请公布日期 2007.08.16
申请号 KR20060013216 申请日期 2006.02.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SONG, IN SANG;KWON, SANG WOOK;KIM, CHUL SOO;PARK, YUN KWON
分类号 H01L27/02;B81B3/00;B81C1/00;H01L27/20;H01L41/09;H01L41/22;H01L41/311;H03H3/02;H03H9/17;H03H9/54 主分类号 H01L27/02
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