发明名称 |
METHOD OF FABRICATING TRANSISTOR OF DRAM SEMICONDUCTOR DEVICE |
摘要 |
Embodiments prevent or substantially reduce diffusion of a P-type impurity into a channel region in a PMOS transistor having a dual gate. Some embodiments include forming a device isolation film on a semiconductor substrate, forming a channel impurity region in an active region of the semiconductor substrate, and forming a gate insulation layer including a silicon oxide layer and a silicon oxide nitride layer on the semiconductor substrate. Also, the embodiments can include forming a polysilicon layer containing an N-type impurity on the gate insulation layer, and forming a gate electrode by selectively ion-implanting a P-type impurity into the polysilicon layer formed in a PMOS transistor region of the circuit region. The embodiments further include forming a conductive metal layer and a gate upper insulation layer on the gate electrode, and forming a gate stack in a gate region.
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申请公布号 |
US2007190723(A1) |
申请公布日期 |
2007.08.16 |
申请号 |
US20070738620 |
申请日期 |
2007.04.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH YONG-CHUL;KIM WOOK-JE;SON NAK-JIN;JANG SE-MYEONG;JIN GYO-YOUNG |
分类号 |
H01L21/336;H01L29/78;H01L21/28;H01L21/8238;H01L21/8242;H01L29/51 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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