发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a solid imaging element that prevents disconnection even in a contact on which a contact hole of a high aspect ratio is formed and has high reliability. SOLUTION: The semiconductor device has an impurity area formed on the substrate surface and a contact portion electrically connected with electrode wiring. Further, the device includes a contact hole which is formed so as to contain the edge of the electrode wiring and to open to the impurity area under wiring composed of a silicon conductive film which electrically connects the electrode wiring and the impurity area to each other in the contact hole, and a metal wiring layer which is formed on the upper layer of the under wiring and connected at least to the under wiring in the contact hole. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007208143(A) 申请公布日期 2007.08.16
申请号 JP20060027499 申请日期 2006.02.03
申请人 FUJIFILM CORP 发明人 IZUMI HIROYUKI
分类号 H01L27/148;H01L21/339;H01L29/762;H04N5/335;H04N5/369;H04N5/372 主分类号 H01L27/148
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