| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device improved in adhesion among metallic particles and a film at the periphery of the metallic particles in addition to the adjustment (a control for a threshold voltage) of the work function of a gate electrode and the inhibition of depletion in the semiconductor device with metallic particles between a gate insulating film and the gate electrode. SOLUTION: In an SOI board 4 composed of a p-type silicon board 1, a buried oxide film 2 and a single-crystal silicon layer 3, a source region 10 and a drain region 11 are formed on the single-crystal silicon layer 3. The surface side of the single-crystal silicon layer 3 between the source region 10 and the drain region 11 functions as a channel layer 3a. The gate insulating film 5 is formed on the channel layer 3a. The gate electrode 8 composed of the metallic particles 6a composed of a titanium nitride and a polycrystalline silicon film 7 is formed on the gate insulating film 5. A titanium silicide reaction layer 6b is formed between the metallic particles 6a and the polycrystalline silicon film 7, and a reaction layer 6c is formed between the metallic particles 6a and the gate insulating film 5 in this case. COPYRIGHT: (C)2007,JPO&INPIT
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