发明名称 |
Process for transferring a thin layer formed in a substrate having crystal originated particles (COPs). |
摘要 |
<p>The production involves forming an insulating layer before SMARTCUT(RTM: Not defined) type transferring of a part of a donor substrate towards a support substrate, where the layer does not increase the size of crystal originated particles (COP) present in the part of the donor substrate with a density. The particles are healed after transferring the part of the donor substrate for reducing the density to another density. Independent claims are also included for the following: (1) an on-insulator semiconductor substrate comprising an insulating layer; and (2) recycling a substrate.</p> |
申请公布号 |
EP1818976(A1) |
申请公布日期 |
2007.08.15 |
申请号 |
EP20060290252 |
申请日期 |
2006.02.14 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
MALEVILLE, CHRISTOPHE;NEYRET, ERIC |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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