发明名称 Process for transferring a thin layer formed in a substrate having crystal originated particles (COPs).
摘要 <p>The production involves forming an insulating layer before SMARTCUT(RTM: Not defined) type transferring of a part of a donor substrate towards a support substrate, where the layer does not increase the size of crystal originated particles (COP) present in the part of the donor substrate with a density. The particles are healed after transferring the part of the donor substrate for reducing the density to another density. Independent claims are also included for the following: (1) an on-insulator semiconductor substrate comprising an insulating layer; and (2) recycling a substrate.</p>
申请公布号 EP1818976(A1) 申请公布日期 2007.08.15
申请号 EP20060290252 申请日期 2006.02.14
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 MALEVILLE, CHRISTOPHE;NEYRET, ERIC
分类号 H01L21/762 主分类号 H01L21/762
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