| 摘要 |
Various embodiments of the present invention are directed to a signal-storing nanowire-crossbar latch array. In one embodiment, the signal-storing nanowire-crossbar latch array is fabricated from three signal lines, including an enable line and two control lines, that cross and intersect with a number of signal wires. Signals are stored in the nanowire-crossbar latch array, and output from the nanowire-crossbar latch array, by applying an input signal to each signal wire and applying selected voltages and voltage pulses to the control lines. In alternate embodiments, a second enable line that crosses and interconnects with each signal wire is added to the nanowire-crossbar latch array.
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