Semiconductor device having SOI structure including a load resistor of an sram memory cell

摘要

It is an object to provide a semiconductor device having an SOI structure in which an electric potential of a body region in an element formation region isolated by a partial isolation region can be fixed with a high stability. A MOS transistor comprising a source region ( 51 ), a drain region ( 61 ) and an H gate electrode ( 71 ) is formed in an element formation region isolated by a partial oxide film ( 31 ). The H gate electrode ( 71 ) electrically isolates a body region ( 13 ) formed in a gate width W direction adjacently to the source region ( 51 ) and the drain region ( 61 ) from the drain region ( 61 ) and the source region ( 51 ) through "I" in a transverse direction (a vertical direction in the drawing), a central "-" functions as a gate electrode of an original MOS transistor.