| 摘要 |
A multi-component barrier polishing solution containing anion surfactant is provided to remove barrier materials effectively by controlled corrosion of dielectric materials under non-ferrous interconnect metals and to achieve high tantalum removal rate and controlled copper, TEOS and CDO removal rate, by comprising the anion surfactant based on sulfonate, sulfate, phosphate or carboxylate, and ammonium cation salt. A polishing solution includes: 0-20wt% of an oxidant; at least 0.001wt% of an inhibitor to reduce non-ferrous interconnect metal removal rate; 1ppm to 4wt% of organic ammonium cation salt represented by the formula; 1ppm to 4wt% of an anion surfactant; 0-50wt% of an abrasive agent; and the balance of water. For the formula, R1,R2,R3 and R4 are radicals and R1 has carbon chain length of which number of carbon atoms ranges from 2 to 25. The anion surfactant has 4 to 25 carbon atoms, and total number of carbon atoms of the ammonium cation salt and the anion surfactant ranges from 6 to 40. The polishing solution has less than pH 7.
|
