发明名称 |
DATA OUTPUT APPARATUS OF SEMICONDUCTOR MEMORY |
摘要 |
A data output apparatus of a semiconductor memory is provided to improve timing margin by aligning global data and a pipe latch driving signal to a rising edge of an input/output enable signal. A first delay unit(210) outputs an input/output sense amplifier strobe signal by delaying an input/output enable signal. A pipe latch strobe signal generation unit(240) receives the input/output enable signal and the input/output sense amplifier strobe signal. A second delay unit(220) receives a pipe latch strobe signal output from the pipe latch strobe signal generation unit. A pipe latch unit(260) receives global data from a global data line in response to a pipe latch driving signal output from the second delay unit.
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申请公布号 |
KR20070080455(A) |
申请公布日期 |
2007.08.10 |
申请号 |
KR20060011783 |
申请日期 |
2006.02.07 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KU, YOUNG JUN;SHIN, BEOM JU |
分类号 |
G11C7/00;G11C7/10 |
主分类号 |
G11C7/00 |
代理机构 |
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地址 |
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