发明名称 DATA OUTPUT APPARATUS OF SEMICONDUCTOR MEMORY
摘要 A data output apparatus of a semiconductor memory is provided to improve timing margin by aligning global data and a pipe latch driving signal to a rising edge of an input/output enable signal. A first delay unit(210) outputs an input/output sense amplifier strobe signal by delaying an input/output enable signal. A pipe latch strobe signal generation unit(240) receives the input/output enable signal and the input/output sense amplifier strobe signal. A second delay unit(220) receives a pipe latch strobe signal output from the pipe latch strobe signal generation unit. A pipe latch unit(260) receives global data from a global data line in response to a pipe latch driving signal output from the second delay unit.
申请公布号 KR20070080455(A) 申请公布日期 2007.08.10
申请号 KR20060011783 申请日期 2006.02.07
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KU, YOUNG JUN;SHIN, BEOM JU
分类号 G11C7/00;G11C7/10 主分类号 G11C7/00
代理机构 代理人
主权项
地址