发明名称 THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND DISPLAY PANEL HAVING THE SAME
摘要 <p>A thin film transistor substrate, a method for manufacturing the same, and a display panel having the same are provided to decrease the coupling capacitance between a pixel electrode and a data line, by disposing a conductive pattern formed of the same material as a gate line between the data line and the pixel electrode so that the conductive pattern and the pixel electrode form a capacitance. A gate pattern is formed on a substrate(510), wherein the gate pattern includes a gate line, a gate electrode(130) connected to the gate line, and a conductive pattern(140). A gate insulating layer(520) covers the gate pattern. An active pattern(210) is disposed on the gate insulating layer. A data pattern is formed on the active pattern, wherein the data pattern includes a data line(310) crossing the gate line, and a source electrode(320) and a drain electrode(330) over the gate electrode. A passivation layer(530) covers the data pattern. A pixel electrode(410) is disposed on the substrate and the gate insulating layer.</p>
申请公布号 KR20070080569(A) 申请公布日期 2007.08.10
申请号 KR20070011950 申请日期 2007.02.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JOO HAN;CHO, BEOM SEOK
分类号 G02F1/136;H01L29/786 主分类号 G02F1/136
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