NODE CONTACT PLUG OF SEMICONDUCTOR DEVICE HAVING STACK CELL STRUCTURE AND METHOD OF FABRICATING THE SAME

摘要

A node contact plug of a semiconductor device having a stack cell structure is provided to embody high integration and improved stability of a semiconductor device by forming an electrically stable node contact plug. A lower gate is formed on a semiconductor substrate(110). An etch stop layer pattern(118) is formed on the resultant structure, having an opening for exposing a predetermined region of the substrate. The semiconductor substrate including the etch stop layer pattern is covered with an interlayer dielectric(122). A single crystalline silicon growth hole is formed which exposes a predetermined region of the etch stop layer pattern including the opening. A single crystalline silicon layer(126) is filled in the single crystalline silicon growth hole, covering the single crystalline silicon layer. An upper gate is formed on the single crystalline silicon layer. The single crystalline silicon layer including the upper gate is covered with a planarization insulation layer(132). In the position of the single crystalline silicon growth hole, the planarization insulation layer, the single crystalline silicon layer, the interlayer dielectric are etched to form a preliminary node contact hole exposing the etch stop layer. The etch stop layer and the single crystalline silicon layer remaining on the lower surface of the preliminary node contact hole are removed to form a node contact hole(136). The node contact hole is filled to form a node contact plug(138).