SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE

摘要

The invention relates to a semiconductor device (10) with a substrate (12) and a semiconductor body (11) of silicon that is provided at one location (A) with a field effect or bipolar transistor (Tl) with a semiconductor region which forms part of the transistor (Tl) and which comprises a source or drain region of the field effect transistor or a base region of the bipolar transistor and which is adjacent to the surface of the semiconductor body (11), which semiconductor region is provided with an epitaxially thickened region. According to the invention the surface of the semiconductor body (11) is provided with another epitaxially thickened region (1) at a location (B) other than the location where the transistor is present, and said other epitaxially thickened region is provided with at least one pn-junction (2,3). If the device is provided with two pn-junctions (2,3) it allows advantageously the integration of a bipolar transistor (T2) into a device with a MOSFET (Tl). The pn-junctions in the epitaxially thickened region of the latter can be removed without difficulty, e.g. by overdoping. The invention also relates to a method of manufacturing such a device (10).