发明名称 VOLTAGE RESETTING CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE USING OPTION FUSE CIRCUIT AND VOLTAGE RESETTING METHOD THEREOF
摘要 A voltage resetting circuit for a semiconductor memory device using an option fuse circuit and a method thereof are provided to improve yield of the semiconductor memory device by generating an internal voltage accurately. A plurality of option fuse circuits(310~314) includes a plurality of fuses, respectively. A fusing control circuit(200) generates a control signal selecting one of the fuses to each option fuse circuit by using a fuse option of a reset fuse. Each option fuse circuit adjusts the output several times by cutting the selected fuse.
申请公布号 KR20070079843(A) 申请公布日期 2007.08.08
申请号 KR20060010843 申请日期 2006.02.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, HEE WON;BYEON, DAE SEOK;HAHN, WOOK GHEE
分类号 G11C5/14 主分类号 G11C5/14
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