发明名称 |
VOLTAGE RESETTING CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE USING OPTION FUSE CIRCUIT AND VOLTAGE RESETTING METHOD THEREOF |
摘要 |
A voltage resetting circuit for a semiconductor memory device using an option fuse circuit and a method thereof are provided to improve yield of the semiconductor memory device by generating an internal voltage accurately. A plurality of option fuse circuits(310~314) includes a plurality of fuses, respectively. A fusing control circuit(200) generates a control signal selecting one of the fuses to each option fuse circuit by using a fuse option of a reset fuse. Each option fuse circuit adjusts the output several times by cutting the selected fuse.
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申请公布号 |
KR20070079843(A) |
申请公布日期 |
2007.08.08 |
申请号 |
KR20060010843 |
申请日期 |
2006.02.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, HEE WON;BYEON, DAE SEOK;HAHN, WOOK GHEE |
分类号 |
G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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