| 摘要 |
A method for forming an SAC(Self-Aligned Contact) of a semiconductor device is provided to restrain the width of a contact hole from being increased due to a cleaning process by protecting sidewalls of the contact hole using a hole spacer. A gate pattern composed of a gate insulating layer, a gate electrode, a capping insulating pattern is formed on a substrate(101). Doped regions(113a) are formed at both sides of the gate pattern in the substrate. A gate spacer is formed at both sidewalls of the gate pattern. An interlayer dielectric(123) is formed on the entire surface of the resultant structure. Contact holes(125a) capable of being self-aligned to the capping insulating pattern and the gate spacer are formed on the resultant structure in order to expose the doped regions to the outside by patterning selectively the interlayer dielectric. A hole spacer layer is formed along an upper surface of the resultant structure. A hole spacer(127a) is formed at the sidewalls of the contact hole by performing an anisotropic etching process on the hole spacer layer until the doped regions are exposed to the outside again. Contact plugs are formed in the contact holes, respectively.
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