| 摘要 |
A method for manufacturing a semiconductor device is provided, in which the lengths of a wiring trench and a via hole in a depth direction are easily controlled. A component (1999) having a first insulating film (1001) is prepared on a substrate, and a layer is disposed on the above-described first insulating film (1001). A mold having a pattern is imprinted on the above-described layer so as to form a second insulating film (1002) having a wiring trench (1003) and a first via (1004), the pattern corresponding to the wiring trench (1003) and the first via (1004). Thereafter, the above-described first insulating film (1001) is etched by using the above-described second insulating film (1002) as a mask so as to form a second via (1005), which is connected to the first via (1004), in the first insulating film (1001). |
