发明名称 Semiconductor device
摘要 When a leakage current of a circuit block under a non-use state is reduced by means of a power switch, frequent ON/OFF operations of the switch within a short time invite an increase of consumed power, on the contrary. Because a pre-heating time is necessary from turn-on of the switch till the circuit block becomes usable, control of the switch during an operation deteriorates a processing time of a semiconductor device. The switch is ON/OFF-controlled with a task duration time of a CPU core for controlling logic circuits and memory cores as a unit. After the switch is turned off, the switch is again turned on before termination of the task in consideration of the pre-heating time.
申请公布号 US7254082(B2) 申请公布日期 2007.08.07
申请号 US20060363060 申请日期 2006.02.28
申请人 HITACHI, LTD. 发明人 WATANABE TAKAO;UCHIYAMA KUNIO;NISHII OSAMU;IRIE NAOHIKO;MIZUNO HIROYUKI
分类号 G06F1/32;G11C8/00;G11C5/14;G11C11/417 主分类号 G06F1/32
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