发明名称 CIRCUIT FOR ENTERING TEST MODE IN SEMICONDUCTOR MEMORY APPARATUS
摘要 A circuit for entering a test mode in a semiconductor memory device is provided to improve time efficiency by outputting a plurality of test signals simultaneously by preventing the loss of a test mode code in entering the test mode. A test mode decoder(400) generates a plurality of decoding signals by decoding a test mode code. A latch unit(500) generates and stores a plurality of latch signals by latching the decoding signals in correspondence to the input of a reset signal. A test signal output unit(600) outputs a plurality of test signals defining the latch signals stored in the latch unit as a test mode in correspondence to the input of a test mode operation signal indicating a test mode operation.
申请公布号 KR20070079110(A) 申请公布日期 2007.08.06
申请号 KR20060009517 申请日期 2006.02.01
申请人 HYNIX SEMICONDUCTOR INC. 发明人 MIN, MIN
分类号 G11C29/14 主分类号 G11C29/14
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