发明名称 SINGLE CRYSTAL MANUFACTURING UNIT AND HIGH PRESSURE SINGLE CRYSTAL MANUFACTURING METHOD USING IT
摘要 PROBLEM TO BE SOLVED: To provide a single crystal manufacturing unit obtaining a novel single crystal in a high pressure gas atmosphere by a floating melt zone method, and a high pressure single crystal manufacturing unit therewith. SOLUTION: In this single crystal manufacturing unit, in a high pressure gas of not lower than 11 atmospheres by the floating melt zone method, a single crystal of orthorombic Ga<SB>2-X</SB>Fe<SB>X</SB>O<SB>3</SB>is manufactured. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007191365(A) 申请公布日期 2007.08.02
申请号 JP20060012546 申请日期 2006.01.20
申请人 JAPAN SCIENCE & TECHNOLOGY AGENCY;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY;CANON MACHINERY INC 发明人 TOKURA YOSHINORI;KANEKO YOSHIO;TOMIOKA YASUHIDE;NAGASAWA TORU
分类号 C30B13/00;C30B29/22 主分类号 C30B13/00
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