摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal manufacturing unit obtaining a novel single crystal in a high pressure gas atmosphere by a floating melt zone method, and a high pressure single crystal manufacturing unit therewith. SOLUTION: In this single crystal manufacturing unit, in a high pressure gas of not lower than 11 atmospheres by the floating melt zone method, a single crystal of orthorombic Ga<SB>2-X</SB>Fe<SB>X</SB>O<SB>3</SB>is manufactured. COPYRIGHT: (C)2007,JPO&INPIT
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