METHOD OF FABRICATING A QUASI-SUBSTARTE WAFER AND SEMICONDUCTOR BODY FABRICATED USING SUCH A QUASI-SUBSTARTE WAFER

摘要

Disclosed are a method of fabricating a quasi-substrate wafer ( 17 ) with a subcarrier wafer ( 4 ) and a growth layer ( 120 ), and a semiconductor body fabricated using such a quasi-substrate wafer ( 17 ). In the method of fabricating a quasi-substrate wafer ( 17 ), a growth substrate wafer ( 1 ) is fabricated that is provided with a separation zone ( 2 ) and comprises the desired material of the growth layer ( 120 ). The growth substrate wafer ( 1 ) is provided with a stress that counteracts a stress generated by the formation of the separation zone, and/or the stress generated by the formation of the separation zone is distributed, by structuring a first main face ( 101 ) of the growth substrate wafer ( 1 ) and/or the separation zone ( 2 ), to a plurality of subregions along the first main face ( 101 ). The growth substrate wafer ( 1 ) with separation zone ( 2 ) exhibits no or only slight bowing.