| 摘要 |
PROBLEM TO BE SOLVED: To improve a withstand voltage greatly by curving the edge of the embedded section of an embedded gate electrode structure so that it is continuous and has a prescribed curvature. SOLUTION: A switch integrated circuit device is in an epitaxial structure having first to third nondoped layers 41-43 in which an AlGaAs layer and an InGaP layer are laminated repeatedly, and a stable layer 44. A D-type HEMT second gate electrode is provided on a third nondoped layer (AlGaAs layer) 43, and an E-type HEMT first gate electrode is provided on a first nondoped layer. The second gate electrode is set to be in a Pt-embedded gate structure, the bottom of the embedded Pt is allowed to remain in the third nondoped layer, thus preventing Pt from reaching the InGaP layer (second nondoped layer), and hence preventing the lateral abnormal diffusion of Pt on the surface of the InGaP layer and improving a withstand voltage greatly. COPYRIGHT: (C)2007,JPO&INPIT
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