发明名称 MANUFACTURING METHOD OF ELEMENT FOR EVALUATING CHARACTERISTIC OF INTER-WIRE INSULATION FILM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a technology capable of accurately measuring and evaluating characteristics of an inter-wire insulation film. <P>SOLUTION: The manufacturing method for the element used for evaluating the characteristics of the inter-wire insulation film 7 includes an easily etched film forming step of providing an easily etched film 3, more easily etched than the inter-wire insulation film, onto a substrate 1 to form a conductive film groove 3a; a conductive film groove forming step of etching the easily etched film 3 provided in the easily etched film forming step; a conductive film forming step of providing a conductive film 6 to the conductive film groove 3a formed in the conductive film groove forming step; a removal step of removing the easily etched film 3 existing between the conductive films 6 by etching after the conductive film forming step; and an inter-wire insulation film forming step of providing the inter-wire insulation film 7 to a groove 3b formed in the removal step after the removal step. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007194529(A) 申请公布日期 2007.08.02
申请号 JP20060013437 申请日期 2006.01.23
申请人 CONSORTIUM FOR ADVANCED SEMICONDUCTOR MATERIALS &RELATED TECHNOLOGIES 发明人 SUMIYA KOJI;TAKIMOTO YOSHIO;KOGA KAZUHIRO
分类号 H01L21/66;H01L21/3205;H01L23/52 主分类号 H01L21/66
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