摘要 |
<p>Semiconductor structures, such as, for example, field effect transistors (FETs) and/or metal- oxide-semiconductor capacitor (MOSCAPs), are provided in which the workfunction of a conductive electrode stack is changed by introducing metal impurities into a metal-containing material layer which, together with a conductive electrode, is present in the electrode stack. The choice of metal impurities depends on whether the electrode is to have an n-type workfunction or a p-type workfunction. The present invention also provides a method of fabricating such semiconductor structures. The introduction of metal impurities can be achieved by codeposition of a layer containing both a metal-containing material and workfunction altering metal impurities, forming a stack in which a layer of metal impurities is present between layers of a metal-containing material, or by forming a material layer including the metal impurities above and/or below a metal-containing material and then heating the structure so that the metal impurities are introduced into the metal-containing material.</p> |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHUDZIK, MICHAEL, P.;DORIS, BRUCE, B.;GUHA, SUPRATIK;JAMMY, RAJARAO;NARAYANAN, VIJAY;PARUCHURI, VAMSI, K.;WANG, YUN, Y.;KWONG HON WONG, KEITH |
发明人 |
CHUDZIK, MICHAEL, P.;DORIS, BRUCE, B.;GUHA, SUPRATIK;JAMMY, RAJARAO;NARAYANAN, VIJAY;PARUCHURI, VAMSI, K.;WANG, YUN, Y.;KWONG HON WONG, KEITH |