发明名称 LAMINATED STRUCTURE, AND ELECTRODE FOR ELECTRIC CIRCUIT USING THE SAME
摘要 <p>A thin film composed of a thin film of ITO and a thin film of molybdenum stacked on top of each other has hitherto been used as a part of an electric circuit, for example, in liquid crystal displays. However, it is known that, when the thin film of molybdenum is formed on the thin film of ITO, internal stress takes place in each of the thin films, disadvantageously leading to separation of the thin film or breaking. To overcome this problem, a laminated film forming technique, which can simplify the step of film formation and the step of etching while preventing cracking and breaking caused by stress between the thin film of ITO and the thin film of molybdenum, has been demanded. As a result of extensive and intensive studies for solving the above problem, it was found that, when the thickness of a transparent electroconductive film is not more than 35 nm, the adhesion of the transparent electroconductive thin film and the thin film of molybdenum metal can be enhanced. By virtue of this finding, the prevention of cracking and breaking and an improvement in yield by the simplification of the process could have been simultaneously realized.</p>
申请公布号 WO2007086280(A1) 申请公布日期 2007.08.02
申请号 WO2007JP50497 申请日期 2007.01.16
申请人 IDEMITSU KOSAN CO., LTD.;UMENO, SATOSHI;HONDA, KATSUNORI;INOUE, KAZUYOSHI;MATSUBARA, MASATO 发明人 UMENO, SATOSHI;HONDA, KATSUNORI;INOUE, KAZUYOSHI;MATSUBARA, MASATO
分类号 G02F1/1343;C23C14/08;H01B5/02;H01B5/14;H01B13/00 主分类号 G02F1/1343
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