发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF REFLECTION TYPE LIQUID CRYSTAL DISPLAY
摘要 PROBLEM TO BE SOLVED: To maintain flatness of a peripheral embedded insulating film without reducing reflectance of a reflection electrode in a step for removing a protective film in a manufacturing method of a semiconductor device and in a manufacturing method of a reflection type liquid crystal display. SOLUTION: After a flattening insulating film 8 is embedded in a peripheral part of a structural body 5 comprising an uppermost layer wiring 6 and the amorphous carbon protective film 7 provided thereon and serving as a reflection preventing film and flattened, the amorphous carbon protective film 7 is removed. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007193200(A) 申请公布日期 2007.08.02
申请号 JP20060012579 申请日期 2006.01.20
申请人 FUJITSU LTD 发明人 MONOE YASUHIRO;OGAWA MASAHIKO
分类号 G02F1/1368 主分类号 G02F1/1368
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