| 摘要 |
PROBLEM TO BE SOLVED: To provide the method of development of resist which permits to wet the whole surface of the photo resist by development solution with high reproductivity while suppressing the using amount of the development solution, and to provide the method of manufacturing a semiconductor device. SOLUTION: The photo resist is developed by a method wherein a wafer having the photo resist with a predetermined pattern exposed thereon is turned while raising the number of rotation from a low-speed rotation to a high-speed rotation, and development solution is dripped from a dripping nozzle with the same length as the diameter of the wafer toward the photo resist on the surface of the turning wafer. In such a method of development of the photo resist, the position of the dripping nozzle is fixed above the wafer so that the center of the dripping nozzle is superposed on the center of the wafer in a plan view while the development solution is not dripped before the wafer arrives at a high-speed rotation (step A), and the development solution is dripped when the wafer has arrived at the high-speed rotation (step B, C). COPYRIGHT: (C)2007,JPO&INPIT |
